Capacitor, Array Of Capacitors, And Device Comprising An Electrode

ABSTRACT

A capacitor includes an elevationally inner capacitor electrode, an elevationally outer capacitor electrode, and capacitor insulator between the elevationally inner and outer capacitor electrodes. The elevationally inner capacitor electrode comprises a hollow longitudinally-elongated conductive cylinder-like portion and a non-hollow longitudinally-elongated conductive cylinder-like portion electrically coupled with the hollow cylinder-like portion. The non-hollow cylinder-like portion is radially of and extends longitudinally along a longitudinal side surface of the hollow cylinder-like portion. Additional embodiments and aspects are disclosed.

TECHNICAL FIELD

Embodiments disclosed herein pertain to capacitors, to arrays ofcapacitors, and to devices comprising an electrode.

BACKGROUND

Capacitors are one type of component used in the fabrication ofintegrated circuits, for example in DRAM and other memory circuitry. Acapacitor is comprised of two conductive electrodes separated by anon-conducting insulator region. As integrated circuitry density hasincreased, there is a continuing challenge to maintain sufficiently highstorage capacitance despite decreasing capacitor area. The increase indensity has typically resulted in greater reduction in the horizontaldimension of capacitors as compared to the vertical dimension. In manyinstances, the vertical dimension of capacitors has increased.

One manner of fabricating capacitors is to initially form an insulativeor other support material within which a capacitor storage electrode isformed. For example, an array of capacitor electrode openings forindividual capacitors may be fabricated in an insulative supportmaterial, with an example material being silicon dioxide doped with oneor both of phosphorus and boron. Openings within which some or all ofthe capacitors are formed are etched into the support material.Conductive material is deposited to line and less-than-fill theindividual openings. The conductive material may be planarized or etchedback relative to the support material to form individual elevationallyinner capacitor electrodes within individual of the openings. In somemethods, most if not all of the support material is then etched away toenable the radially outer as well as the radially inner sidewallsurfaces of the electrodes to provide capacitor surface area and therebyincreased capacitance for the capacitors being formed. Yet, capacitorelectrodes formed in deep openings are often correspondingly much tallerthan they are wide. This can lead to toppling of the capacitorelectrodes during etching to expose the outer sidewall surfaces, duringtransport of the substrate, during deposition of the capacitor insulatormaterial, and/or during deposition of the outer capacitor electrodematerial. Brace or lattice-like retaining structures have been proposedand used to alleviate such toppling.

Still, capacitors continue to be packed horizontally closer together.This may be facilitated by making the lateral or radial thicknesses ofthe elevationally inner capacitor electrodes ever thinner. This maydiminish their structural integrity to the point of requiring that thesome or all of the support material remain radially outward of theelectrodes for them to survive subsequent processing. Accordingly, onlysome or none of the radially outer surfaces of such capacitor electrodesare covered by the capacitor insulator between the elevationally innerand outer electrodes, resulting in loss of capacitive surface area andcapacitance. Capacitance reduced thereby may be compensated for bymaking the capacitors taller. This may, however, lead to increasedelectrical resistance from the bottom of the individual capacitorelectrodes to their tops due to the thinner radial/lateral thickness ofthe conductive material from which the capacitor electrodes are formed.Such can result in read/write characteristics of the capacitor beingdegraded.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic top view of a substrate fragment comprising acapacitor in accordance with an embodiment of the invention.

FIG. 2 is a diagrammatic sectional view taken through line 2-2 in FIG.1.

FIG. 3 is an enlarged sectional view of only one component of thesubstrate fragment as shown in FIG. 1.

FIG. 4 is a diagrammatic perspective view of the one component shown inFIG. 3.

FIG. 5 is a view of an alternate embodiment to the one component shownin FIG. 3.

FIG. 6 is a diagrammatic top view of a substrate fragment in process inaccordance with an embodiment of the invention.

FIG. 7 is a diagrammatic reduced-scale sectional view taken through line7-7 in FIG. 6.

FIG. 8 is a diagrammatic reduced-scale sectional view taken through line8-8 in FIG. 6.

FIG. 9 is a view of the FIG. 6 substrate at a processing step subsequentto that shown by FIG. 6.

FIG. 10 is a diagrammatic reduced-scale sectional view taken throughline 10-10 in FIG. 9.

FIG. 11 is a diagrammatic reduced-scale sectional view taken throughline 11-11 in FIG. 9.

FIG. 12 is a view of the FIG. 9 substrate at a processing stepsubsequent to that shown by FIG. 9.

FIG. 13 is a diagrammatic reduced-scale sectional view taken throughline 13-13 in FIG. 12.

FIG. 14 is a diagrammatic reduced-scale sectional view taken throughline 14-14 in FIG. 12.

FIG. 15 is a view of the FIG. 13 substrate at a processing stepsubsequent to that shown by FIG. 13.

FIG. 16 is a view of the FIG. 14 substrate at a processing stepsubsequent to that shown by FIG. 14, and corresponds in processingsequence to that of FIG. 15.

FIG. 17 is a view of the FIG. 12 substrate at a processing stepsubsequent to that shown by FIGS. 15 and 16.

FIG. 18 is a diagrammatic reduced-scale sectional view taken throughline 18-18 in FIG. 17.

FIG. 19 is a diagrammatic reduced-scale sectional view taken throughline 19-19 in FIG. 17.

FIG. 20 is a view of the FIG. 17 substrate at a processing stepsubsequent to that shown by FIG. 17.

FIG. 21 is a diagrammatic reduced-scale sectional view taken throughline 21-21 in FIG. 20.

FIG. 22 is a diagrammatic reduced-scale sectional view taken throughline 22-22 in FIG. 20.

FIG. 23 is a view of the FIG. 20 substrate at a processing stepsubsequent to that shown by FIG. 20.

FIG. 24 is a diagrammatic reduced-scale sectional view taken throughline 24-24 in FIG. 23.

FIG. 25 is a diagrammatic reduced-scale sectional view taken throughline 25-25 in FIG. 23.

FIG. 26 is a view of the FIG. 23 substrate at a processing stepsubsequent to that shown by FIG. 23.

FIG. 27 is a diagrammatic reduced-scale sectional view taken throughline 27-27 in FIG. 26.

FIG. 28 is a diagrammatic reduced-scale sectional view taken throughline 28-28 in FIG. 26.

FIG. 29 is a view of the FIG. 27 substrate at a processing stepsubsequent to that shown by FIG. 27.

FIG. 30 is a view of the FIG. 28 substrate at a processing stepsubsequent to that shown by FIG. 28, and corresponds in processingsequence to that of FIG. 29.

FIGS. 31 and 32 show an alternate embodiment to that shown by FIGS. 27and 28, respectively.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

A capacitor in accordance with an embodiment of the invention isinitially described with reference to FIGS. 1-4. Such show a substratefragment 10 (FIGS. 1 and 2) comprising a capacitor 12 that has beenfabricated over a base substrate 14. Base substrate 14 may comprise anyone or more of conductive (i.e., electrically herein), semiconductive,or insulative/insulator (i.e., electrically herein) material(s). Aninsulative material 16 (e.g., silicon dioxide) is shown receivedcircumferentially about capacitor 12 over base substrate 14. Materialsmay be aside, elevationally inward, or elevationally outward of theFIGS. 1 and 2—depicted materials. For example, other partially or whollyfabricated components of integrated circuitry may be provided somewhereabout or within fragment 10. Regardless, any of the materials, regions,and structures described herein may be homogenous or non-homogenous, andregardless may be continuous or discontinuous over any material whichsuch overlie. Further, unless otherwise stated, each material may beformed using any suitable or yet-to-be-developed technique, with atomiclayer deposition, chemical vapor deposition, physical vapor deposition,epitaxial growth, diffusion doping, and ion implanting being examples.

Capacitor 12 comprises an elevationally inner capacitor electrode 18, anelevationally outer capacitor electrode 20, and capacitor insulator 22there-between. In this document, “elevational”, “upper”, “lower”, “top”,“bottom”, and “beneath” are generally with reference to the verticaldirection. “Horizontal” refers to a general direction (i.e., within 10degrees) along a primary surface relative to which the substrate isprocessed during fabrication, and vertical is a direction generallyorthogonal thereto. Further, “vertical” and “horizontal” as used hereinare generally perpendicular directions relative one another andindependent of orientation of the substrate in three-dimensional space.FIGS. 3 and 4 only show elevationally inner capacitor electrode 18 foremphasis, with other materials and components in FIGS. 1 and 2 not beingshown in FIGS. 3 and 4 for clarity. Capacitor electrodes 18 and 20 maycomprise the same conductive material(s) or may comprise differentconductive material(s). Any suitable conductive material may be usedsuch as one or more elemental metal(s), an alloy of two or moreelemental metals, conductive metal compounds, and/or conductively dopedsemiconductive material(s). One specific example is TiN. Elevationallyouter capacitor electrode 20 may completely fill internal volume of voidspace defined by elevationally inner capacitor electrode 18 as shown, ormay less-than-fill such void space (not shown). Any suitable insulativematerial may be used for capacitor insulator 22, such as silicondioxide, silicon nitride, dielectric metal oxides, and ferroelectricmetal oxides.

In one embodiment, elevationally inner capacitor electrode 18 comprisesa hollow longitudinally-elongated conductive cylinder-like portion 24and a non-hollow longitudinally-elongated conductive cylinder-likeportion 26 that is electrically coupled with hollow cylinder-likeportion 24. In this document, devices/materials/components are“electrically coupled” relative one another if in normal operationelectric current is capable of continuously flowing from one to theother, and does so predominately by movement of subatomic positiveand/or negative charges when such are sufficiently generated. Conductivecylinder-like portion 24 and conductive cylinder-like portion 26 may beof the same composition or of different composition relative oneanother. As used herein, “different composition” only requires thoseportions of two stated materials that may be directly against oneanother to be chemically and/or physically different, for example ifsuch materials are not homogenous. If the two stated materials are notdirectly against one another, “different composition” only requires thatthose portions of the two stated materials that are closest to oneanother be chemically and/or physically different if such materials arenot homogenous. In this document, a material or structure is “directlyagainst” another when there is at least some physical touching contactof the stated materials or structures relative one another. In contrast,“over”, “on”, “adjacent”, “along”, and “against” not preceded by“directly” encompass “directly against” as well as construction whereintervening material(s) or structure(s) result(s) in no physicaltouching contact of the stated materials or structures relative oneanother.

Elevationally inner capacitor electrode 18 comprises a longitudinal sidesurface 28 and a longitudinal side surface 30 (FIGS. 3 and 4). Surface28 comprises a radially inner longitudinal side surface and surface 30comprises a radially outer longitudinal side surface. Non-hollowcylinder-like portion 26 is radially of and extends longitudinally alonga longitudinal side surface 28, 30 of hollow conductive cylinder-likeportion 24. In one embodiment and as shown, non-hollow cylinder-likeportion 26 is radially outward of radially outer longitudinal sidesurface 30. Alternately or additionally, the non-hollow cylinder-likeportion could be radially inward (not shown) of radially innerlongitudinal side surface 28. In one such embodiment, capacitorinsulator 22 is radially over and directly against (not shown)non-hollow cylinder-like portion 26. Regardless, in one embodiment,conductive material of hollow cylinder-like portion 24 is directlyagainst conductive material of non-hollow cylinder-like portion 26.Alternately as an example, conductive materials of the hollow andnon-hollow cylinder-like portions may not be directly against oneanother, for example being radially spaced relative one another (notshown).

In one embodiment where conductive material of hollow cylinder-likeportion 24 is directly against conductive material of non-hollowcylinder-like portion 26, non-hollow cylinder-like portion 26 projectsradially relative to one of radially inner or outer longitudinal sidesurfaces 28 and 30 (e.g., surface 30 as shown). In one such embodiment,such projects radially a distance A that is at least equal, and in oneembodiment as shown that is greater than, a radial thickness B ofconductive material of hollow cylinder-like portion 24 between radiallyinner and outer longitudinal side surfaces 28 and 30, respectively. Inthis document, “thickness” by itself (no preceding directionaladjective) is defined as the mean straight-line distance through a givenmaterial or region perpendicularly from a closest surface of animmediately adjacent material of different composition or of animmediately adjacent region. Additionally, the various materials orregions described herein may be of substantially constant thickness orof variable thicknesses. If of variable thickness, thickness refers toaverage thickness unless otherwise indicated, and such material orregion will have some minimum thickness and some maximum thickness dueto the thickness being variable.

In one embodiment, non-hollow cylinder-like portion 26 has astraight-line width C relative to the circumference of hollowcylinder-like portion 24 that is greater than radial thickness B. In oneembodiment, straight-line width C is less than two times radialthickness B, and in one embodiment no greater than 1.5 times radialthickness B. In one embodiment, non-hollow cylinder-like portion 26 inhorizontal cross-section has a straight side surface, in one embodimentat least two such surfaces, and in one embodiment at least three suchsurfaces, with three straight side surfaces 32 (FIG. 3) being shown.

In one embodiment, non-hollow cylinder-like portion 26 extends along atleast 50% of a length L of a longitudinal side surface of hollowcylinder-like portion 24. In one such embodiment, portion 26 extendsalong at least 80% of length L, and in one embodiment and as shown alongall of length L.

FIGS. 1-4 show an example embodiment capacitor comprising only a singlenon-hollow longitudinally elongated conductive cylinder-like portion 26.An alternate example embodiment is shown in FIG. 5 with respect to anelevationally inner capacitor electrode 18 a. Like numerals from theabove-described embodiment have been used where appropriate, with someconstruction differences being indicated with the suffix “a” or withdifferent numerals. Elevationally inner capacitor electrode 18 a isshown as comprising multiple (i.e., at least two) non-hollow conductivecylinder-like portions 26, 27 and which are circumferentially spacedrelative one another and hollow cylinder-like portion 24. In one suchembodiment and as shown, two of such non-hollow cylinder-like portions26, 27 are diametrically opposed to one another. Alternateconfigurations, are of course contemplated, including more than twonon-hollow cylinder-like portions and regardless of whether such are onthe same or different radial sides (i.e., inside or outside) of hollowcylinder-like portion 24. Regardless, the multiple non-hollow conductivecylinder-like portions individually may be of the same or differentsize(s), shape(s), and/or construction(s) relative one another. Anyother attribute(s) or aspect(s) as shown and/or described above may beused.

Embodiments of the invention also encompass a device comprising anelectrode. An example such device is a capacitor with the electrodecomprising a capacitor electrode, although other devices which are notcapacitors are also contemplated. In such embodiment, the electrode,such as an electrode 18/18 a, comprises a cup-shaped portion 24including a radially outer surface 30, a radially inner surface 28, atop portion 37 (FIG. 2), a bottom portion 39 (FIG. 2), and a base 45(FIG. 2). Electrode 18/18 a also includes a projected portion 26 and/or27 (i.e., regardless of whether non-hollow) protruding radially fromradially outer surface 30 of cup-shaped portion 24 and extending fromtop portion 37 of cup-shaped portion 24 to bottom portion 39 ofcup-shaped portion 24. In one embodiment and as shown, projected portion26 and/or 27 extends to a top 41 of top portion 37, and in oneembodiment extends to a bottom 43 of bottom portion 39. Regardless, inone embodiment projected portion 26 extends along at least 80% of lengthL of cup-shaped portion 24, and in one embodiment along all of length L.Any other attribute(s) or aspect(s) as described above and/or shown inFIGS. 1-5 may be used.

Embodiments of the invention encompass an array of capacitors, forexample comprising a plurality of any one of more of the capacitordesigns as described above. One example such array 75 is shown in FIGS.29 and 30, and is further described below.

A method embodiment of the invention of forming an array of capacitorscomprising the embodiment of FIG. 5 is next described with reference toFIGS. 6-30. Like numerals from the above-described embodiments for likematerials and constructions are used where appropriate, with someconstruction differences and additions being indicated with differentnumerals or the suffix “b”. In FIGS. 6-30, the sectional views are shownat 25% reduced scale compared to the top views both for clarity in thetop views and to fit the sectional views for the same processing step onthe same page as the top view.

Referring to FIGS. 6-8, substrate fragment 10 b has a base substrate 14b comprising substrate material 17 having insulative material 44there-over. In one embodiment, elevationally-extending conductiveconduits 42 extend upwardly from substrate material 17 throughinsulative material 44. Substrate material 17 may comprise semiconductormaterial (e.g., monocrystalline silicon), thereby rendering basesubstrate 14 b and substrate fragment 10 b as being a semiconductorsubstrate. In the context of this document, the term “semiconductorsubstrate” or “semiconductive substrate” is defined to mean anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductive substratesdescribed above. Insulative material 44 may comprise any suitableinsulative material as described above. Conductive conduits 42 may be ofany suitable horizontal cross-sectional shape(s) (e.g., circular,square, rectangular, ellipsoidal, etc.), with example ellipses beingshown. As will be apparent from the continuing discussion and in oneembodiment, conductive conduits 42 will be elevationally inward of andto which elevationally inner capacitor electrodes of individualcapacitors within the array will electrically couple. Conductiveconduits 42 may extend elevationally inward to electrically couple withaccess devices (e.g., diodes, source/drain regions of transistors,etc.), for example if formed as part of an array of memory cells such asDRAM or other memory.

Referring to FIGS. 9-11, openings 46 for individual elevationally innercapacitor electrodes have been formed through insulative material 16 toconductive conduits 42. In one embodiment and as shown, openings 46 arearranged in a 2D hexagonal lattice pattern (i.e., a Bravais lattice ofone type) whereby the resulting elevationally inner capacitor electrodesof the array of capacitors may also be arranged in a 2D hexagonallattice pattern. In one embodiment, openings 46 are formed to becircular in horizontal cross-section, although any shape may be used.Horizontal cross-sectional sizes and/or shapes of openings 46 andconductive conduits 42 may be the same or different, with differentsizes and shapes being shown. In but one example, an example maximumopen diameter of individual openings 46 is 512 Angstroms, an exampleminimum separation distance between immediately adjacent openings 46 is50 Angstroms, and thereby providing a minimum pitch of 562 Angstromsalong the primitive vectors spanning the lattice. Alternateconfigurations may of course be used.

Referring to FIGS. 12-14, an insulative spacer material 50 has beendeposited over insulative material 16 to line and less-than-fillopenings 46. This has been followed by an anisotropic etch of material50 to remove such from being over horizontal surfaces to leave material50 along sidewalls of openings 46 as shown. Insulative spacer material50 is ideally of a different composition from that of insulativematerial 16, and an example deposition thickness is 50 Angstroms.

Referring to FIGS. 15 and 16, first and second masking materials 52 and54, respectively, have been formed as part of substrate fragment 10.First masking material 52 has been deposited to overfill remainingvolume of openings 46, followed by a polish or etch-back thereof atleast to the elevationally outermost surfaces of materials 50 and 16.Second masking material 54 has been subsequently deposited thereover.Masking materials 52 and 54 may be of the same or different compositionsrelative one another, with organic materials being examples.

Referring to FIGS. 17-19, second masking material 54 has been patternedinto a line and space pattern to arrange periodically in the verticaldirection represented in FIG. 17. In one embodiment, the line and spacepattern has a pitch which is equal to the half-pitch of openings 46 asformed and described above with respect to FIGS. 9-11. Accordingly inthe above specific example, such a half-pitch would be 281 Angstroms,with the individual spaces between second masking material 54 having amaximum width of 50 Angstroms. In one example embodiment and as shown,the spaces pass diametrically through the center of each opening 46 andbetween immediately adjacent openings 46 in alternating rows of openings46.

Referring to FIGS. 20-22, the exposed portions of spacer material 50have been anisotropically etched selectively relative to maskingmaterials 52 and 54 and relative to insulative material 16 to formopenings 60 elevationally through spacer material 50 to conductiveconduits 42 and insulative material 44. Spacer material 50 may bedivided into two symmetrical half circle-like portions as shown.

Referring to FIGS. 23-25, masking materials 52 and 54 (not shown) havebeen removed, thereby ideally exposing more of individual conductiveconduits 42.

Referring to FIGS. 26-28, conductive material has been deposited to lineand less-than-fill-remaining volume of openings 46 and to completelyfill openings 60, followed by a polish back at least to theelevationally outermost surfaces of materials 16 and 50, thereby formingelevationally inner capacitor electrodes 18 a within individual openings46. In one embodiment and as shown, elevationally inner capacitorelectrodes 18 a individually electrically couple to individualconductive conduits 42 there-beneath.

Accordingly in the depicted embodiment, elevationally inner capacitorelectrodes 18 a individually comprise a hollow longitudinally-elongatedconductive cylinder-like portion 24 and a pair of non-hollowlongitudinally-elongated conductive cylinder-like portions 26, 27 whichelectrically couple with hollow cylinder-like portion 24. Non-hollowcylinder-like portions 26, 27 are radially of and extend longitudinallyalong one of two diametrically opposed longitudinal sides of hollowcylinder-like portion 24. In one embodiment and as shown, elevationallyinner capacitor electrodes 18 a are arranged in a 2D hexagonal latticepattern. In one such embodiment and as shown, conductive conduits 42 arenot arranged in any 2D Bravais lattice pattern (i.e., are not arrangedin an infinite array of discrete points generated by a set of discretetranslation operations defined by R=n₁a₁+n₂a₂, where n₁ and n₂ are anyintegers and a₁ and a₂ are the primitive vectors which lie in differentdirections and span the lattice; see, for example, FIG. 6 wherein theellipses are not in any 2D Bravais lattice pattern).

In one embodiment and as shown, one of non-hollow cylinder-like portions26, 27 of the pair of such cylinder-like portions is directly against anindividual of conduits 42. In one such embodiment, the other of thenon-hollow cylinder-like portions 26 or 27 of the pair is not directlyagainst such individual conduit 42.

Referring to FIGS. 29 and 30, capacitor insulator 22 b has beendeposited over elevationally inner capacitor electrodes 18 a.Subsequently, a conductive material has been deposited to form anelevationally outer capacitor electrode 20 b common to the individualelevationally inner capacitor electrodes 18 a. Thereby, an array 75 ofcapacitors 12 b has been formed and as well is shown and may beconsidered independent of method of manufacture.

FIGS. 31 and 32 show an alternate embodiment substrate fragment 10 cjust prior to deposition of the capacitor insulator and outer capacitorelectrode materials. Like numerals from the above-described embodimentshave been used where appropriate, with some differences being indicatedwith the suffix “c”. Fragment 10 c is shown as forming non-hollowcylinder-like portions 26 c and 27 c as comprising a differentconductive material 55 from that of hollow cylinder-like portions 24.Such might be formed by filling openings 60 with conductive material 55immediately after their formation, followed by deposition of conductivematerial of portion 24 after removal of masking material 52.Alternately, as an example, conductive material portions 26 c and 27 ccould be masked in FIGS. 26-28 and conductive material of portions 24anisotropically etched away. Then, a different conductive compositionfor portions 24 could be deposited.

The above embodiments described with reference to FIGS. 6-32, by way ofexample only, formed a capacitor in accordance with the above-describedFIG. 5 embodiment. Alternately as an example, an array of capacitors maybe formed wherein individual of the elevationally inner capacitorelectrodes individually comprise a construction as shown in the FIGS.1-4 embodiment, or any other capacitor embodiments in accordance withthis disclosure.

CONCLUSION

In some embodiments, a capacitor comprises an elevationally innercapacitor electrode, an elevationally outer capacitor electrode, andcapacitor insulator between the elevationally inner and outer capacitorelectrodes. The elevationally inner capacitor electrode comprises ahollow longitudinally-elongated conductive cylinder-like portion and anon-hollow longitudinally-elongated conductive cylinder-like portionelectrically coupled with the hollow cylinder-like portion. Thenon-hollow cylinder-like portion is radially of and extendslongitudinally along a longitudinal side surface of the hollowcylinder-like portion.

In some embodiments, a device comprises an electrode that comprises acup-shaped portion including a radially outer surface, a radially innersurface, a top portion, and a bottom portion. A projected portionprotrudes radially from the radially outer surface of the cup-shapedportion and extends from the top portion of the cup-shaped portion tothe bottom portion of the cup-shaped portion.

In some embodiments, an array of capacitors comprises an array ofelevationally inner capacitor electrodes of individual of thecapacitors. The array also comprises an elevationally outer capacitorelectrode common to the individual elevationally inner capacitorelectrodes. A capacitor insulator is between the elevationally inner andouter capacitor electrodes. The elevationally inner capacitor electrodesindividually comprise a hollow longitudinally-elongated conductivecylinder-like portion and a pair of non-hollow longitudinally-elongatedconductive cylinder-like portions electrically coupled with the hollowcylinder-like portion. The non-hollow cylinder-like portions areradially of and extend longitudinally along one of two diametricallyopposed longitudinal sides of the hollow cylinder-like portion.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A capacitor comprising: an elevationally inner capacitor electrode,an elevationally outer capacitor electrode, and capacitor insulatorbetween the elevationally inner and outer capacitor electrodes; theelevationally inner capacitor electrode comprising: a hollowlongitudinally-elongated conductive cylinder-like portion; and anon-hollow longitudinally-elongated conductive cylinder-like portionelectrically coupled with the hollow cylinder-like portion, thenon-hollow cylinder-like portion being radially of and extendinglongitudinally along a longitudinal side surface of the hollowcylinder-like portion.
 2. The capacitor of claim 1 wherein thenon-hollow cylinder-like portion extends along at least 50% of length ofthe longitudinal side surface of the hollow cylinder-like portion. 3.The capacitor of claim 2 wherein the non-hollow cylinder-like portionextends along all of the length of the longitudinal side surface of thehollow cylinder-like portion.
 4. The capacitor of claim 1 wherein thehollow cylinder-like portion comprises a radially inner longitudinalside surface and a radially outer longitudinal side surface, thenon-hollow cylinder-like portion being radially outward of the radiallyouter longitudinal side surface.
 5. The capacitor of claim 1 wherein theelevationally inner capacitor electrode comprises multiple of saidnon-hollow longitudinally-elongated conductive cylinder-like portionsand which are circumferentially spaced relative one another.
 6. Thecapacitor of claim 5 wherein two of said non-hollow cylinder-likeportions are diametrically opposed to one another.
 7. The capacitor ofclaim 1 wherein conductive material of the hollow cylinder-like portionis directly against conductive material of the non-hollow cylinder-likeportion.
 8. The capacitor of claim 7 wherein the hollow cylinder-likeportion comprises a radially inner longitudinal side surface and aradially outer longitudinal side surface, the non-hollow cylinder-likeportion projecting radially relative to one of the radially inner orouter longitudinal side surfaces a distance at least equal to radialthickness of the conductive material of the hollow cylinder-like portionbetween the radially inner and outer longitudinal side surfaces.
 9. Acapacitor comprising: an elevationally inner capacitor electrode, anelevationally outer capacitor electrode, and capacitor insulator betweenthe elevationally inner and outer capacitor electrodes; theelevationally inner capacitor electrode comprising: a hollowlongitudinally-elongated conductive cylinder-like portion; a non-hollowlongitudinally-elongated conductive cylinder-like portion electricallycoupled with the hollow cylinder-like portion, the non-hollowcylinder-like portion being radially of and extending longitudinallyalong a longitudinal side surface of the hollow cylinder-like portion;conductive material of the hollow cylinder-like portion being directlyagainst conductive material of the non-hollow cylinder-like portion; andthe hollow cylinder-like portion comprising a radially innerlongitudinal side surface and a radially outer longitudinal sidesurface, the non-hollow cylinder-like portion projecting radiallyrelative to one of the radially inner or outer longitudinal sidesurfaces, the non-hollow cylinder-like portion having a straight-linewidth relative to circumference of the hollow cylinder-like portion thatis greater than radial thickness of the conductive material of thehollow cylinder-like portion between the radially inner and outerlongitudinal side surfaces.
 10. The capacitor of claim 1 wherein thenon-hollow cylinder-like portion has at least two straight side surfacesin horizontal cross-section.
 11. An array of the capacitors of claim 1.12. An array of capacitors comprising: an array of elevationally innercapacitor electrodes of individual of the capacitors; an elevationallyouter capacitor electrode common to the individual elevationally innercapacitor electrodes; and capacitor insulator between the elevationallyinner and outer capacitor electrodes; the elevationally inner capacitorelectrodes individually comprising: a hollow longitudinally-elongatedconductive cylinder-like portion; and a pair of non-hollowlongitudinally-elongated conductive cylinder-like portions electricallycoupled with the hollow cylinder-like portion, the non-hollowcylinder-like portions being radially of and extending longitudinallyalong one of two diametrically opposed longitudinal sides of the hollowcylinder-like portion.
 13. The array of claim 12 wherein theelevationally inner capacitor electrodes are arranged in a 2D hexagonallattice pattern.
 14. An array of capacitors comprising: an array ofelevationally inner capacitor electrodes of individual of thecapacitors, the elevationally inner capacitor electrodes being arrangedin a 2D Bravais hexagonal lattice pattern; an elevationally outercapacitor electrode common to the individual elevationally innercapacitor electrodes; and capacitor insulator between the elevationallyinner and outer capacitor electrodes; the elevationally inner capacitorelectrodes individually comprising: a hollow longitudinally-elongatedconductive cylinder-like portion; and a pair of non-hollowlongitudinally-elongated conductive cylinder-like portions electricallycoupled with the hollow cylinder-like portion, the non-hollowcylinder-like portions being radially of and extending longitudinallyalong one of two diametrically opposed longitudinal sides of the hollowcylinder-like portion; and elevationally-extending conductive conduitselevationally inward of and to which the elevationally inner capacitorelectrodes individually electrically couple, the conduits not beingarranged in any 2D Bravais lattice pattern.
 15. The array of claim 12comprising elevationally-extending conductive conduits elevationallyinward of and to which the elevationally inner capacitor electrodesindividually electrically couple, one of the non-hollow cylinder-likeportions of the pair being directly against an individual of theconduits.
 16. The array of claim 15 wherein the other of the non-hollowcylinder-like portions of the pair is not directly against saidindividual conduit. 17-20 (canceled)
 21. The capacitor of claim 1wherein the hollow cylinder-like portion comprises a radially innerlongitudinal side surface and a radially outer longitudinal sidesurface, the non-hollow cylinder-like portion being radially inward ofthe radially inner longitudinal side surface.
 22. The capacitor of claim21 wherein the capacitor insulator is radially over and directly againstthe radially inward non-hollow cylinder-like portion.
 23. The capacitorof claim 1 wherein the elevationally inner capacitor electrode comprisesmore than two of said non-hollow longitudinally-elongated conductivecylinder-like portions and which are circumferentially spaced relativeone another.
 24. The capacitor of claim 1 wherein the elevationallyinner capacitor electrode comprises no more than one of said non-hollowlongitudinally-elongated conductive cylinder-like portion.
 25. Thecapacitor of claim 1 wherein the non-hollow cylinder-like portion has aradially-outermost end terminus surface and two side surfaces extendingradially inward there-from.
 26. The capacitor of claim 10 wherein thenon-hollow cylinder-like portion has at least three straight sidesurfaces in horizontal cross-section
 27. The array of claim 12 whereinthe hollow cylinder-like portion comprises a radially inner longitudinalside surface and a radially outer longitudinal side surface, thenon-hollow cylinder-like portion being radially inward of the radiallyinner longitudinal side surface.
 28. The array of claim 27 wherein thecapacitor insulator is radially over and directly against the radiallyinward non-hollow cylinder-like portion.
 29. The array of claim 12wherein the elevationally inner capacitor electrode comprises more thantwo of said non-hollow longitudinally-elongated conductive cylinder-likeportions and which are circumferentially spaced relative one another.30. The array of claim 12 wherein the elevationally inner capacitorelectrode comprises no more than one of said non-hollowlongitudinally-elongated conductive cylinder-like portion.
 31. The arrayof claim 12 wherein the non-hollow cylinder-like portion has aradially-outermost end terminus surface and two side surfaces extendingradially inward there-from, the end terminus surface being laterallyspaced from the elevationally inner capacitor electrode of animmediately-laterally-adjacent one of the capacitors in the array. 32.The array of claim 12 wherein the non-hollow cylinder-like portion hasat least three straight side surfaces in horizontal cross-section.